Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
نویسندگان
چکیده
منابع مشابه
Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. Th...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2006
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-006-9004-x